Nanolithography by high energy electron beam
نویسندگان
چکیده
2014 The theoretical advantages of high energy beam (E0 = 100 keV) in electron lithography in the nanometer range ( 0.1 03BCm) are discussed. Using a Monte Carlo model, the different contributions at energy deposit in the PMMA resist are separated and the influence of each of them on the final resolution is analysed. Revue Phys. Appl. 23 (1988) JUILLET 1988, PAGE 1317 Classification Physics Abstracts 79.20 61.80 73.90
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